The depth profiles of diffused H in n-type samples were determined by means of secondary ion mass spectroscopy. Specimens with Si donor concentrations which ranged from 1017 to 5 x 1018/cm3 were exposed to monatomic D from a remote microwave plasma at temperatures of between 250 and 310C. The profiles clearly revealed that D accumulation occurred up to a concentration that was almost equal to that of the donors over a depth which depended upon the temperature and time of hydrogenation and upon the donor concentration. A plateau in the H concentration was attributed to a trapping-limited migration of H which was dominated by the formation of SiH complexes via the Coulombic attraction of Si+ and H-. The analysis of profiles in the tail region beyond the plateau yielded independent estimates of the thermal dissociation rate for the SiH complex, and a lower limit of about 0.45eV for the binding of Si+ and H- into SiH.

Depth Distribution of Diffused Hydrogen in n-Type GaAs. G.Roos, N.M.Johnson, C.Herring, J.Walker: Materials Science Forum, 1994, 143-147, 933-8