An InAs monolayer was grown between GaAs layers by using the migration-enhanced epitaxy method. The surface chemical characteristics during growth were investigated by means of reflection high-energy electron diffraction. When the substrate temperature was equal to about 500C, the oscillation amplitude of the reflected electron beam after the growth of one monolayer of InAs vanished during the growth of GaAs over more than 20 atomic layers. High-resolution secondary ion mass spectroscopic analysis of the fabricated structures indicated that an anomalous distribution of In atoms, with a gradual slope towards the growth direction, occurred when the substrate temperature was 500C. The experimental results were explained in terms of the replacement of In atoms, in the InAs monolayer, by newly deposited Ga atoms.

Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy. H.Yamaguchi, Y.Horikoshi: Japanese Journal of Applied Physics, 1989, 28[11], L2010-2