It was pointed out that one of the potential advantages of rapid thermal annealing, as compared with conventional furnace annealing, was a reduced implanted dopant and background impurity diffusion. Here, the migration of Mn during the annealing of Cr-doped semi-insulating material implanted with 100keV Si+ ions to a dose of 7 x 1012/cm2 was measured by using secondary ion mass spectrometry. Un-capped rapid thermal annealing (860 or 930C, 1 to 60s) was investigated and its effect was compared with that of capless furnace annealing (0.5h). The migration of Mn was undetectable for rapid thermal annealing times which were shorter than 60s, but dominated 0.5h furnace anneals.

Substrate Impurity Migration during Rapid Thermal Annealing of Si Implanted GaAs.  H.Kanber, J.M.Whelan: Journal of the Electrochemical Society, 1987, 134[10], 2596-9