A study was made of the diffusion coefficient of Pd under various annealing conditions. The extent of diffusion was characterized by using secondary ion mass spectrometry. The temperature-dependent diffusion coefficients of Pd were 8.4 x 10-13, 2.25 x 10-12 and 9.51 x 10-12cm2/s, respectively, at 400, 550 and 850C. The Pd diffusion behavior was described by:

D (cm2/s) = 3.54 x 10-10exp[-0.35(eV)/kT]

This indicated that the major diffusion mechanism of Pd in GaAs was interstitial diffusion.

Palladium Diffusion Transport in n-Type GaAs. D.H.Yeh, L.Z.Hsieh, L.B.Chang, M.J.Jeng, P.Y.Kuei: Japanese Journal of Applied Physics, 2007, 46[3A], 968-70