Secondary ion mass spectroscopy and carrier concentration measurements were used to characterize Si diffusion into GaAs wafers which contained 2 fundamentally different types of donor. These were column-IV donors (Si, Sn) and column-VI donors (Se, Te). A decrease in the Si diffusion rate was found in material which contained column-VI donors as compared with that which contained column-IV donors. This trend was consistent with a model in which Si diffused as donor Ga-vacancy complexes. The decrease in the Si diffusion coefficient was attributed to the greater binding energy of column-VI donor Ga-vacancy nearest-neighbor complexes. This reduced the numbers of free Ga vacancies which were available to complex with the Si.

Sensitivity of Si Diffusion in GaAs to Column IV and VI Donor Species. D.G.Deppe, N.Holonyak, J.E.Baker: Applied Physics Letters, 1988, 52[2], 129-31