The diffusion of Si was studied by using secondary ion mass spectroscopic and transmission electron microscopic methods after implanting it using energies ranging from 20 to 200keV and doses ranging from 1013 to 1014/cm2, followed by furnace annealing. It was found that little or no diffusion occurred after implantation at energies greater than 100keV. At energies of less than 100keV, there was usually appreciable dopant redistribution; regardless of the peak implant concentration. Both concentration-dependent and concentration-independent diffusion was observed. The dislocation loop density varied inversely with the amount of diffusion as a function of implantation energy. A standard Monte Carlo computer program was able to predict the trends in the implant energy dependence of diffusion by considering the excess point defect content which was produced by implantation. The effect of this excess defect dose and of surface effects upon Si diffusion was consistent with vacancy-assisted diffusion.

Effect of Ion Energy on the Diffusion of Si Implanted into GaAs. C.C.Lee, M.D.Deal, K.S.Jones, H.G.Robinson, J.C.Bravman: Journal of the Electrochemical Society, 1994, 141[8], 2245-9