The diffusion of Si from a novel diffusion source, consisting of an undoped SiOx/SiN double-layered film, was studied by rapid thermal annealing at 860 to 940C. The characteristics of the Si-diffused layers were investigated by using secondary ion mass spectrometric, capacitance-voltage, and Hall methods. The carrier profiles exceeded 2 x 1018/cm3, and featured an abrupt diffusion front. A maximum electron concentration of 6 x 1018/cm3 was obtained at 940C. The diffused Si profiles were consistent with the operation of SiGa+-VGa- pair diffusion.

Diffusion and Doping of Si into GaAs from Undoped SiOx/SiN Film. S.Matsushita, S.Terada, E.Fujii, Y.Harada: Applied Physics Letters, 1993, 63[2], 225-7