The structural properties of samples which had been implanted with 150 or 400keV Ti, to doses of between 1012 and 1015/cm2, were studied. The depth distributions of the implants were compared before and after annealing with, or without, a Si3N4 cap. Rutherford back-scattering, X-ray double-crystal diffractometry, and secondary ion mass spectroscopy results indicated that the Ti did not redistribute at all.

Defect-Induced Redistribution of Fe- or Ti-Implanted and Annealed GaAs, InAs, GaP, and InP. H.Ullrich, A.Knecht, D.Bimberg, H.Kräutle, W.Schlaak: Journal of Applied Physics, 1992, 72[8], 3514-21