The diffusion of V was studied in V-doped GaAs layers grown by metalorganic chemical vapor deposition using secondary ion mass spectroscopy. The V concentration profiles of sandwiched structures, made up of alternately undoped and V-doped GaAs layers had shown a concentration independent diffusion coefficient, DV, for V doping levels of 1018 to 1019/cm3. Measurements of DV at 550, 615 and 680C (figure 5) indicated that the temperature dependence of DV could be described by:

D (cm2/s) = 2.4 x 10-6 exp[-1.51(eV)/kT]

It was suggested that the V diffused via interstitial sites.

Diffusion of Vanadium in GaAs. A.Bchetnia, M.Souissi, A.Rebey, B.El Jani: Journal of Crystal Growth, 2004, 270[3-4], 376-9