Laser-assisted disordering was studied by using scanning electron microscopy and secondary ion mass spectrometry. This permitted the extent of the layer-disordered region to be correlated with the presence of laser-incorporated Si and O. Transmission electron microscopic studies permitted the determination of the distribution of Al and Ga at the interface between the impurity-disordered alloy and the as-grown crystal. The data revealed the occurrence of more rapid Si diffusion in the GaAs layers as compared with the Al-rich layers.

Layer Disordering of GaAs-AlGaAs Superlattices by Diffusion of Laser-Incorporated Si. J.E.Epler, F.A.Ponce, F.J.Endicott, T.L.Paoli: Journal of Applied Physics, 1988, 64[7], 3439-44