GaAsN: H Diffusion Concentration depth-profiles of deuterium were determined by means of secondary ion mass spectrometry under a wide range of experimental conditions that involved various N concentrations (x = 0.09%, 0.40%, 0.70% or 1.5%) and D bombardment temperatures (200, 250, 300 or 350C). The experimental data were successfully reproduced by a diffusion model which included strong D trapping. The deuterium diffusion and capture-rate coefficients were determined, and a minimum decay length of the deuterium front was found at low bombardment temperatures (<250C) and high x-values (>0.7%). These parameters limited the experimental conditions within which nanostructuring of the physical properties of GaAs1−xNx was attainable.

Hydrogen Diffusion in GaAs1−xNx. R.Trotta, D.Giubertoni, A.Polimeni, M.Bersani, M.Capizzi, F.Martelli, S.Rubini, G.Bisognin, M.Berti: Physical Review B, 2009, 80[19], 195206