Samples were exposed to H and D plasmas. The diffusion of D was measured by means of secondary ion mass spectroscopy. The profiles showed that 2 different species or 2 different mechanisms were involved. They also revealed that D (or H) interacted strongly with Be acceptors. This was confirmed by electronic transport measurements, which demonstrated passivation, by H, of the electrical activity of Be. This led, at intermediate doping levels, to the samples becoming n-type after Hation.

H in a Be-Doped GaInAsP Lattice Matched to InP - Diffusion and Interactions with Dopants F.Gérard, B.Theys, A.Lusson, F.Jomard, C.Dolin, E.V.K.Rao, J.L.Benchimol: Semiconductor Science and Technology, 1999, 14[12], 1136-40