The effect of concurrent Zn diffusion upon interdiffusion in an Ga0.94In0.06As0.95P0.05-GaAs heterostructure, grown by means of liquid phase epitaxy, was investigated. Diffusion annealing (700C, 25h) was performed by using an equilibrium ternary diffusion source, and In and P profiles were measured by using secondary ion mass spectrometry. It was found that Zn diffusion selectively enhanced cation (In-Ga) interdiffusion. In the case of concurrent Zn diffusion, the interdiffusion coefficient for the In-Ga components was about 5 x 10-14cm2/s; as compared with about 6 x 10-16cm2/s for anions (As-P). A kick-out mechanism was suggested to explain the results.

Zn Diffusion Enhancement of Interdiffusion in a GaAs-InGaPAs Heterostructure. H.H.Park, K.H.Lee, D.A.Stevenson: Applied Physics Letters, 1988, 53[23], 2299-301