Concentration-dependent diffusion in layers which had been grown by gas-source molecular beam epitaxy was studied by using secondary ion mass spectrometry. At a growth temperature of 500C, apparent Be diffusion occurred at doping levels above 4 x 1019/cm3. At lower temperatures, the Be profile revealed a significantly reduced diffusion. No enhancement of Be redistribution by adjacent n-type layers occurred. The results were explained in terms of the interstitial-substitutional diffusion model.

Study of Concentration-Dependent Be Diffusion in GaInP Layers Grown by Gas Source Molecular Beam Epitaxy W.Li, J.Likonen, J.Haapamaa, M.Pessa: Journal of Applied Physics, 2000, 87[10], 7592-3