Films were implanted with 150keV Ar+ at up to 1100C, using a dose of 3 x 1015/cm2. The Ar concentration profiles were measured by using secondary ion mass spectroscopy, and the depth distributions of ion-induced damage were estimated from Rutherford back-scattering/channelling spectra. No redistribution of Ar atoms was detected at up to 700C. At 1000C, a deep penetrating diffusion tail and a shift in the Ar peak to the surface were observed. At temperatures higher than 800C, a shift in the damage peak to the surface was also observed. The shift in the Ar peak and the damage peaks was attributed to the evaporation of a thin layer of GaN during high-temperature implantation.

GaN Evaporation and Enhanced Diffusion of Ar during High-Temperature Ion Implantation. I.Usov, N.Parikh, Y.Kudriavtsev, R.Asomoza, Z.Reitmeier, R.Davis: Journal of Applied Physics, 2003, 93[9], 5140-2