Gold diffusion at 300 and 400C in 2µm-thick undoped wurtzite GaN grown by the metal–organic chemical vapor deposition technique was studied by using secondary ion mass spectroscopy depth profiles. The diffusion coefficients D300C = 1.03 x 10-15cm2/s, D400C = 1.69 x 10-14cm2/s and the activation energy Q = 0.93eV were obtained. The dominant mechanism of Au diffusion in GaN was probably the diffusion of an impurity by the interstitial mode. Comparison with Au diffusion in other semiconductors was made.

Study of Au Diffusion in 0001 Undoped Wurtzite GaN. Y.Kang, X.Li, H.Gong, R.Jiang: Semiconductor Science and Technology, 2003, 18[7], 607-10