Donor (S, Se, Te) and acceptor (Mg, Be, C) dopants were implanted to doses ranging from 3 x 1014 to 5 x 1014/cm2, and were then annealed at temperatures of up to 1450C. No redistribution of any of the implants, except Be, was detectable by secondary ion mass spectrometry. The implanted Be exhibited a behavior which was consistent with damage-assisted diffusion at 900C. There was no further movement of the Be at higher temperatures, for peak annealing durations of 10s. The effective diffusivities were less than 2 x 10-13cm2/s at 1450C for all of the dopants.

Redistribution of Implanted Dopants in GaN. X.A.Cao, R.G.Wilson, J.C.Zolper, S.J.Pearton, J.Han, R.I.Shul, D.I.Rieger, R.K.Singh, M.Fu, V.Scarvepalli, J.A.Sekhar, J.M.Zavada: Journal of Electronic Materials, 1999, 28[3], 261-5