The diffusion mechanism of Er, and the optical properties of Er-diffused GaN, were studied. The diffusion coefficient was measured by means of Rutherford back-scattering spectroscopy and secondary ion mass spectrometry. The Er was also implanted, in order to compare the photoluminescence characteristics. The photoluminescence emission of Er-diffused and implanted GaN could be observed in the infra-red region. The emission intensity efficiency, as related to the Er distribution after Er diffusion, was considered.

Er Diffusion into Gallium Nitride. C.C.Chen, Y.S.Ting, C.C.Lee, G.C.Chi, P.Chakraborty, T.Chini, H.W.Chuang, J.S.Tsang, C.T.Kuo, W.C.Tsai, S.H.Chen, J.I.Chyi: Solid-State Electronics, 2003, 47[3], 529-31