Lithium ions in dosages of 2.6 x 1012, 2.6 x 1013, 2.6 x 1014 and 2.6 x 1015/cm2 were implanted into a GaN thin film grown onto sapphire substrates. The diffusion behavior of these implanted Li ions in GaN thin film at different temperature anneals was studied using secondary ion mass spectrometry. In general, the diffusion profiles showed relatively little movement of Li in the GaN thin film for temperatures up to 700C. At low-temperature anneals (<500C), up-hill diffusion dominated the Li profiles and at high-temperature anneals (>800C), out-diffusion dominated the Li profiles.

Diffusion Behavior of Implanted Li Ions in GaN Thin Films Studied by Secondary Ion Mass Spectrometry. F.Salman, L.Chow, B.Chai, F.A.Stevie: Materials Science in Semiconductor Processing, 2006, 9[1-3], 375-9