Thermal diffusion and incorporation of oxygen in gallium nitride during MOVPE growth process was investigated using secondary ion mass spectroscopy. The source of oxygen were (18O) implanted into GaN or Al2O3 substrate. Experiment showed no oxygen diffusion from Ar-implanted sapphire or O-implanted GaN and extremely deep diffusion from O-implanted sapphire.

Oxygen Diffusion into GaN from Oxygen Implanted GaN or Al2O3. R.Jakiela, E.Dumiszewska, P.Caban, A.Stonert, A.Turos, A.Barcz: Physica Status Solidi C, 2011, 8[5], 1513–5

Figure 6

Diffusion of 17O in p-Type GaN