The defect structures which were introduced by Zn diffusion in intrinsic GaP single crystals at temperatures of between 1182 and 1358K, and in intrinsic GaSb single crystals at 883K, were characterized for diffusion times of up to 1.5h by means of analytical transmission electron microscopy. The results were compared with Zn concentration depth profiles which were obtained by means of secondary ion mass spectroscopy. In regions near to the Zn diffusion front, dislocation loops of interstitial type and Ga-rich precipitates were found. A loose network of dislocations, dislocation loops and faceted voids with Ga-rich precipitates was observed closer to the surface. In addition, a surface layer of polycrystalline Zn3P2 formed at the surface of GaP; at higher diffusion temperatures. The formation of diffusion-induced defects was suggested to be similar to the defect formation during Zn diffusion in GaAs and InP.

Defect Formation during Zn Diffusion in GaP and GaSb C.Jäger, W.Jäger, G.Bösker, J.Pöpping, N.Stolwijk: Philosophical Magazine A, 2000, 80[1], 1-7