Out-diffusion profiles of O in (111) samples of Czochralski material were studied at 700 to 1160C, under an N atmosphere, steam oxidation, or P in-diffusion conditions, by using secondary ion mass spectrometry. The diffusivity and solubility of O were determined by fitting the profiles to a simple diffusion model. The O diffusivity exhibited little or no dependence upon the processing conditions, and could be described by:

D (cm2/s) = 1.4 x 10-1 exp[-2.53(eV)/kT]

The results showed that point defects in Si had little effect upon O diffusion, and demonstrated that O diffused mainly via an interstitial mechanism.

S.T.Lee, D.Nichols: Applied Physics Letters, 1985, 47[9], 1001-3

The best linear fits to the solute diffusion data ([124] to [129], [133] to [144], [146] to [176], [188] to [192], [196] to [211], [215] to [223], [234] to [242], [252] to [283], [292] to [298], [306] to [314]) yield:

Al: Ln[Do] = 0.45E – 32.8 (R2 = 0.81); As: Ln[Do] = 0.29E – 23.2 (R2 = 0.87);

Au: Ln[Do] = 0.16E – 12.4 (R2 = 0.16); B: Ln[Do] = 0.29E – 22.6 (R2 = 0.79);

Cu: Ln[Do] = 0.22E (R2 = 0.86); Fe: Ln[Do] = 0.62E – 15.8 (R2 = 0.53);

Ga: Ln[Do] = 0.20E - 16.9 (R2 = 0.78); Ge: Ln[Do] = 0.29E – 23.2.8 (R2 = 0.98);

H: Ln[Do] = 0.17E - 9.9 (R2 = 0.07); Li: Ln[Do] = 0.25E – 9.6 (R2 = 0.48);

Ni: Ln[Do] = 0.29E - 19.4 (R2 = 0.66); O: Ln[Do] = 0.34E – 21.6 (R2 = 0.95);

P: Ln[Do] = 0.35E - 27 (R2 = 0.94); Sb: Ln[Do] = 0.35E – 29.3 (R2 = 0.96);

Si: Ln[Do] = 0.33E - 29 (R2 = 0.86)