Cathodoluminescence microscopic and scanning tunnelling spectroscopic investigations were made of Zn-diffused n-type material. Samples with various diffusion profiles, as measured by secondary ion mass spectrometry, were obtained. The cathodoluminescence plan-view observations revealed a high homogeneity of the diffused layers. Cross-sectional measurements of the Zn-diffused layers were performed by means of current-imaging tunnelling spectroscopy. The junction border was revealed clearly in the latter images, and conductance spectra which were recorded at various points of the layers, provided information on local surface band-gaps and conductive behaviour. The results were related to the diffusion profiles, and were found to agree with previously suggested diffusion models.

Study of Zn Diffusion in n-Type GaSb by Cathodoluminescence and Scanning Tunnelling Spectroscopy. P.Hidalgo, B.Méndez, J.Piqueras, P.S.Dutta: Materials Science and Engineering B, 2001, 80[1-3], 125-9