A closed-ampoule technique was used to introduce Zn into Te-doped material. Annealing was carried out for various times; with or without an Sb over-pressure. The total Zn profiles were measured by using secondary ion mass spectrometry, and carrier profiles were deduced from incremental sheet resistance data. It was found that the diffusivity varied, with Zn concentration, from 6.3 x 10-12cm2/s for a concentration of 3 x 1020/cm3 at 500C.

Zinc Diffusion in Gallium Antimonide. G.J.Conibeer, A.F.W.Willoughby, C.M.Hardingham, V.K.M.Sharma: Materials Science Forum, 1994, 143-147, 1427-32