The diffusion of Zn in n-type material, at temperatures ranging from 450 to 540C, was studied. The diffusion was carried out in a closed system, using a Zn-Ga source. The diffusion profiles were measured by using secondary ion mass spectrometry. On the basis of the diffusion profiles, concentration-dependent diffusion coefficients were calculated by using Boltzmann-Matano analyses. These data were qualitatively interpreted in terms of an interstitial-substitutional diffusion model which had originally been proposed for Zn diffusion in GaAs.

Zinc Diffusion in GaSb. V.S.Sundaram, P.E.Gruenbaum: Journal of Applied Physics, 1993, 73[8], 3787-9