The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy onto a Ge(001) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7 to 0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs was suggested. Mn surface desorption occurred at above 600C.

Manganese Diffusion in Monocrystalline Germanium. A.Portavoce, O.Abbes, Y.Rudzevich, L.Chow, V.Le Thanh, C.Girardeaux: Scripta Materialia, 2012, 67[3], 269-72