The diffusion of Sn in intrinsic Ge was studied, at temperatures ranging from 555 to 930C, by means of secondary ion mass spectrometry. The Sn was in-diffused, under vacuum conditions, from both the gas phase and from thin films. In both cases, the pure metal was used as a source of Sn. Within the above temperature range, the diffusivity of Sn as a function of temperature (table 17) could be expressed by:

D(cm2/s) = 8.40 x 102exp[-3.26(eV)/kT]

On the basis of similarities between Sn diffusion and Ge self-diffusion, it was concluded that Sn in Ge diffused via a mono-vacancy mechanism.

Diffusion of Tin in Germanium Studied by Secondary Ion Mass Spectrometry. M.Friesel, U.Södervall, W.Gust: Journal of Applied Physics, 1995, 78[9], 5351-5