The rapid thermal diffusion of In into Hg0.70Cd0.30 was investigated by monitoring In concentration profiles using secondary ion mass spectrometry. It was found that there were 2 diffusing components. One was an atomic diffusion component which could be fitted by a complementary error function, and the other was a fast diffusion component with an exponential dependence. The rapid thermal diffusion of In into Hg0.70Cd0.30, at temperatures of between 100 and 200C (figure 9), could be described by:

D (cm2/s) = 1.45 x 10-2 exp[-0.772(eV)/kT]

Rapid Thermal Diffusion of Indium in p-HgCdTe/CdTe. S.M.Park, J.M.Kim, H.C.Lee, C.K.Kim: Japanese Journal of Applied Physics, 1996, 35[2-12A], L1554-7

 

Table 17

Diffusivity of Sn in Ge

 

Temperature (C)

Method

D (cm2/s)

930

gas phase

2.22 x 10-11

900

gas phase

8.92 x 10-12

875

gas phase

3.73 x 10-12

850

gas phase

1.89 x 10-12

825

gas phase

8.32 x 10-13

800

gas phase

4.28 x 10-13

775

gas phase

1.71 x 10-13

750

gas phase

6.92 x 10-14

725

gas phase

1.95 x 10-14

700

gas phase

1.33 x 10-14

650

gas phase

1.57 x 10-15

615

gas phase

2.72 x 10-16

555

gas phase

1.19 x 10-17

900

thin film

7.84 x 10-12

750

thin film

6.57 x 10-14

700

thin film

1.12 x 10-14