The ability of high-resolution X-ray diffraction to provide information on atomic diffusion was analyzed. Special attention was paid to Hg diffusion in heterostructures. The depth-resolved concentration profiles which were obtained were compared with those measured by secondary ion mass spectrometry. The results which were obtained by using these 2 methods were compared, and were found to differ considerably at temperatures of between 350 and 400C. The activation energy was equal to 2.65eV, according to high-resolution X-ray diffraction measurements and was equal to 1.2eV, according to secondary ion mass spectrometry. The higher value was closer to the predicted value.

Study of Atomic Diffusion in Crystalline Structures by High-Resolution X-Ray Diffraction. Y.Avrahami, D.Shilo, N.Mainzer, E.Zolotoyabko: Journal of Crystal Growth, 1999, 198-199[1-4], 264-9