Single (200keV) and multiple-energy Fe implantation of n-type material was carried out on In0.52Al0.48As at room temperature or 200C. Secondary ion mass spectrometry profiles revealed marked out-diffusion during all of the rapid thermal annealing treatments which were used; regardless of the implantation temperature. The Fe implantation peaks which were observed after the annealing of other In-based compounds were not observed here.

Fe and Ti Implants in In0.52Al0.48As. J.M.Martin, R.K.Nadella, M.V.Rao, D.S.Simons, P.H.Chi, C.Caneau: Journal of Electronic Materials, 1993, 22[9], 1153-8