Metal-organic vapor phase diffusion into epitaxial layers, using diethylzinc, was studied. The InAs0.60P0.40 epitaxial layers were grown via low-pressure metal-organic vapor phase epitaxy. Hole concentrations of 1.7 x 1019 were obtained. Diffusion depths were measured by using cleave-and-stain techniques, electrochemical profiling, resistivity measurements and secondary ion mass spectroscopy. Hall measurements were also used to determine the hole concentrations. The diffusion depth could be controlled reproducibly from 0.5 to over 2μm. The diffusion coefficients were derived and the effect, of the dislocation density of the InAs0.60P0.40 layers, upon the Zn diffusion process was investigated by epitaxial growth on various substrate orientations.

MOVPE-Based Zn Diffusion into InP and InAsP/InP Heterostructures. K.Vanhollebeke, M.D'Hondt, I.Moerman, P.Van Daele, P.Demeester: Journal of Crystal Growth, 2001, 233[1-2], 132-40