Ions of P and Be were co-implanted into the InGaAs, and various annealing treatments were performed at 745 to 826C. Secondary ion mass spectrometry measurements revealed an anomalous redistribution of the Be dopant, and up-hill Be diffusion profiles were observed. Observations of the as-implanted profiles suggested that these anomalous Be peaks were due to Be trapping by the extended defects that were generated by P implantation. Good agreement was obtained between the experimental data and simulated profiles.

Anomalous Thermal Redistribution of Beryllium Implanted in InGaAs - a Possible Interaction with Extended Defects. M.Ihaddadene, J.Marcon, M.Idrissi-Benzohra, K.Ketata, S.Demichel, J.Flicstein, J.L.Pelouard, M.Ketata: Computational Materials Science, 2002, 24[1-2], 257-61