The diffusion of Be was studied in InGaAs grown by gas-source molecular beam epitaxy. The observed secondary ion mass spectrometry Be profiles, obtained for annealing cycles between 700 and 900C, could be explained by considering several forms of kick-out mechanism. Diffusion models for Be in InGaAs were obtained without a priori consideration of interstitial Be and self-interstitials. It was concluded that 2 kick-out mechanisms led to similar fittings of experimental profiles and might not be distinguishable by using the present experimental conditions.

Determination of Beryllium and Self-Interstitial Diffusion Parameters in InGaAs. J.Marcon, M.Ihaddadene, K.Ketata: Journal of Crystal Growth, 2003, 253[1-4], 174-82