Results were reported for Be diffusion during the post-growth rapid thermal annealing at 750 and 850C of homostructures which had been grown by gas-source molecular beam epitaxy. Profiles calculated using the kick-out model could be fitted to experimental secondary ion mass spectrometry profiles by assuming that the Be diffused as neutral interstitial species.

Be Diffusion Behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE Structures. S.Koumetz, C.Dubois: Journal of Crystal Growth, 2003, 252[1-3], 14-8