The diffusion of Be during post-growth annealing was investigated in epitaxial layers. Several forms of kick-out mechanism were implemented in simulation programs, and experimental concentration profiles which were obtained by means of secondary ion mass spectrometry were compared with the results of the simulations. It was deduced that the kick-out mechanism, Bei0 ↔ Bes- - IIII-, was the predominant diffusion mechanism under the present experimental conditions. It was concluded that the effective diffusivity was equal to 7.7 x 10-11 to 9.0 x 10-11cm2/s at 700C, and equal to 1.4 x 10-11 to 1.5 x 10-11cm2/s at 800C. These values were several orders of magnitude higher than most published data. This was tentatively attributed to an effect of the V/III flux ratio.

A Comprehensive Study of Beryllium Diffusion in InGaAs using Different Forms of Kick-Out Mechanism J.Marcon, S.Koumetz, K.Ketata, M.Ketata, J.G.Caputo: European Physical Journal, Applied Physics, 1999, 8[1], 19-24