The diffusion of Be during the post-growth rapid thermal annealing of layers which had been grown by using gas-source molecular beam epitaxy was studied. The secondary ion mass spectrometric concentration measurements, for various annealing cycles (10 to 240s, 700 to 900C) and Be concentration of 3 x 1019/cm3, could be explained in terms of a kick-out mechanism which involved neutral Be interstitials and singly positively charged group-III self-interstitials.

Modelling and simulation of beryllium diffusion in InGaAs compounds K.Ketata, M.Ketata, S.Koumetz, J.Marcon, M.Masmoudi: Modelling and Simulation in Materials Science and Engineering, 1998, 6[6], 747-53. See also: Europhysics Letters, 1999, 45[3], 348-53, Journal of Crystal Growth, 1998, 194[1], 297-300 and Solid State Communications, 1998, 106[9], 573-6