The diffusion of Be in epitaxial layers during post-growth annealing was investigated. Concentration profiles, which were measured by means of secondary ion mass spectrometry, were compared with the results of simulations that were based upon a kick-out mechanism. It was concluded that the kick-out mechanism, Bei0  Be- + IIII+, was the predominant diffusion process.

Investigation of Be Diffusion in InGaAs using Kick-Out Mechanism.  J.Marcon, S.Gautier, S.Koumetz, K.Ketata, M.Ketata: Computational Materials Science, 1998, 10[1-4], 28-32