A secondary ion mass spectroscopic study demonstrated that, during the growth of Zn-doped In0.53Ga0.47As layers by atmospheric-pressure organometallic vapor-phase epitaxy, Zn atoms which were trapped on interstitial sites during growth, rather than interstitial Zn defects which were generated by the kick-out mechanism, were probably the main cause of the carrying over of Zn into subsequent layers. The interstitial Zn incorporation seemed to be due to the saturation of In substitution, rather than of Ga substitution. It was possible that the use of pauses in the growth sequence, both before and after the growth of a Zn-doped layer, could control these effects.

Secondary Ion Mass Spectroscopy Study of the Diffusion of Zn in Ga0.47In0.53As. S.J.Taylor, B.Beaumont, J.C.Guillaume: Semiconductor Science and Technology, 1993, 8[12], 2193-6