Secondary ion mass spectrometry and electrochemical profiling studies were made of the saturation of Zn doping and diffusion in In0.53Ga0.47As which had been grown onto InP by using organometallic vapor-phase epitaxy. It was found that the results were consistent with a so-called kick-out mechanism. It was proposed that the diffusing species was probably a neutral Zn interstitial. Accumulation of Zn at the interface with a highly n-doped layer indicated the possible formation of Zn-donor complexes.

Diffusion of Zn across p-n Junctions in Ga0.47In0.53As. S.J.Taylor, B.Beaumont, J.C.Guillaume: Semiconductor Science and Technology, 1993, 8[5], 643-6