Diffusion-induced disordering of multiple quantum wells was investigated as a possible new processing technique for long-wavelength opto-electronic devices. Complete disordering of the multiple quantum well structure was confirmed by an observed shortening of the photoluminescence peak wavelength and by secondary ion mass spectrometry data. Lattice-matched disordering was also detected by using X-ray diffraction techniques. The first long-wavelength buried multiple quantum well laser was fabricated, in which carrier confinement was obtained by disordering.

Zn-Diffusion-Induced Disordering of InGaAs/AlGaInAs Multiple Quantum Well and Its Application to Long-Wavelength Laser. K.Goto, F.Uesugi, S.Takahashi, T.Takiguchi, E.Omura, Y.Mihashi: Japanese Journal of Applied Physics, 1994, 33[1-10], 5774-8