An investigation was made of Be diffusion from an In0.53Ga0.47As layer, with a Be dopant level of 3 x 1019/cm3, which was sandwiched between undoped InP layers. The InP/InGaAs/InP heterostructures, grown via gas-source molecular beam epitaxy, were subjected to halogen-lamp rapid thermal annealing (700 to 900C, 10 to 240s). The observed Be depth profiles, as deduced using secondary ion mass spectrometry, could be explained in terms of kick-out diffusion which involved neutral Be interstitial species in InGaAs, and singly-ionized Be interstitial species in InP.

Be Diffusion in InGaAs/InP Heterostructures Grown by Gas Source Molecular Beam Epitaxy. S.Koumetz, K.Ketata, M.Ihaddadene, E.Joubert, M.Ketata, C.Dubois: Journal of Crystal Growth, 2000, 220[1-2], 46-50