Interdiffusion in In0.32Ga0.68As0.984N0.016/GaAs multiple quantum wells with well widths of 2 and 4nm, respectively, was investigated both experimentally and theoretically. Maximum blue-shifts of 206 and 264meV in the photoluminescence spectra were observed. Secondary ion mass spectrometry showed that both In–Ga and N–As interdiffusion played key roles for the large blue-shifts. The significant In–Ga interdiffusion occurred at 650C while the N diffusion occurred at above 700C. The theoretical results were in good agreement with the experimental observations.

Interdiffusion in Narrow InGaAsN/GaAs Quantum Wells. W.Liu, D.H.Zhang, Z.M.Huang, S.Z.Wang, S.F.Yoon, W.J.Fan, C.J.Liu, A.T.S.Wee: Journal of Applied Physics, 2007, 101[10], 103111