Gas-source molecular beam epitaxy was used to prepare structures which consisted of a 200nm Be-doped (3 x 1019/cm3) In0.73Ga0.27As0.58P0.42 layer that was sandwiched between two 500nm undoped In0.73Ga0.27As0.58P0.42 layers. The samples were subjected to rapid thermal annealing (700 to 900C, 10 to 240s), and secondary ion mass spectrometry was used to determine Be depth profiles. The concentration profiles were simulated by using 2 kick-out models. The first one involved neutral Be interstitials and singly positively charged GaIn self-interstitials. The second model involved singly positively charged Be interstitials and doubly positively charged GaIn self-interstitials. A comparison with experimental data showed that the former kick-out model led to the better agreement.

The Modelling of Beryllium Diffusion in InGaAsP Layers Grown by GSMBE under Non-Equilibrium Conditions M.Ketata, K.Ketata, S.Koumetz, J.Marcon, C.Dubois: European Physical Journal, Applied Physics, 1999, 8[1], 7-18