The ampoule diffusion of Zn into liquid-phase epitaxial layers was studied, at temperatures of between 425 and 525C, by means of secondary ion mass spectrometry. It was found that the incorporation and diffusion of Zn could be described in terms of the interstitial-substitutional model. The difference between the acceptor and Zn concentrations was attributed to compensation by Zn interstitial donors or by neutral Zn-vacancy complexes. The diffusion depth was slightly smaller than that in InP and was much larger than that in GaAs. In the case of n-type InGaAsP, the profiles exhibited a cut-off which was like that seen in InP.

Zinc Diffusion in InGaAsP. G.J.Van Gurp, D.L.A.Tjaden, G.M.Fontijn, P.R.Boudewijn: Journal of Applied Physics, 1988, 64[7], 3468-71