A study was made of dopant redistribution between a chemical beam epitaxially grown InGaAsP laser structure, and a metalorganic vapor phase epitaxially over-grown InP layer. Secondary ion mass spectroscopic data revealed that Zn and Be atoms interdiffused deeply into the adjacent InP layers, at a Zn doping level of 1018/cm3. A fraction of the Zn atoms went through the chemical beam epitaxial InP, and penetrated the laser structure guide layer. It was found that Zn out-diffusion was appreciably suppressed by reducing the Be dopant concentration from 1018 to 5 x 1017/cm3.

Be–Zn Interdiffusion and its Influence on InGaAsP Lasers Fabricated by Hybrid Growth of Chemical Beam Epitaxy and Metalorganic Vapor Phase Epitaxy. H.Sugiura, S.Kondo, M.Mitsuhara, S.Matsumoto, M.Itoh: Applied Physics Letters, 1997, 70[21], 2846-8