The out-diffusion of H was studied, using 2H plasma-treated (250 or 400C, 0.5h) or 2H+-implanted samples, during annealing at temperatures ranging from 300 to 900C. Secondary ion mass spectrometry was used to measure the resultant distributions. At concentrations that were greater than 1020/cm3, there was a near-surface (less than 0.3) region that was probably due to the formation of platelet defects. At concentrations of about 1018/cm3, a plateau region was present which extended throughout the film thickness of about 1. This was attributed to the pairing of 2H with point defects. In implanted samples, 2H redistribution occurred in the same manner as the bulk population in plasma-treated material. The thermal stability of the D profiles in the nitride was much higher than that in GaAs and similar compounds.

Outdiffusion of Deuterium from GaN, AlN, and InN. R.G.Wilson, S.J.Pearton, C.R.Abernathy, J.M.Zavada: Journal of Vacuum Science and Technology A, 1995, 13[3], 719-23