Hydrogenated (deuterated) Zn-doped layers were exposed to a D (H) plasma and diffusion profiles were measured by means of secondary ion mass spectroscopy. They were compared with those obtained by exposure of as-grown samples to identical plasma conditions. It was shown that partial substitution of D (H) for H (D) occurred as a consequence of the breaking of the original H (D)–acceptor complexes. It was also demonstrated that, after the break, released H (D) species were trapped in the vicinity of the acceptor with which they originally formed a complex.

Diffusion of Deuterium (Hydrogen) in Previously Hydrogenated (Deuterated) III–V Semiconductors. B.Theys, F.Jomard: Journal of Applied Physics, 2003, 93[8], 4590-3