The diffusion mechanism of Mg was studied during low-pressure metalorganic vapor-phase epitaxial growth. The Mg dopant profiles were measured by means of secondary ion mass spectroscopy. The analysis revealed that abrupt Mg dopant profiles were possible. However, the Mg diffusivity depended markedly upon the Mg concentration in the crystal lattice. Simultaneous doping with Si led to a distinct decrease in Mg diffusion. This behavior was consistent with a model which assumed that the Mg diffused as a complex which involved a deep donor.

Mg Diffusion during Metalorganic Vapor Phase Epitaxy of InP. E.Veuhoff, H.Baumeister, R.Treichler, O.Brandt: Applied Physics Letters, 1989, 55[10], 1017-9