Samples of Fe-doped material were implanted with 80keV Mg, Mg and P, or Mg and Ar in order to produce shallow p+ layers. After rapid thermal annealing (850 or 875C, 5 or 10s), activations of between 10 and 50% and mobilities of up to 110cm2/Vs were obtained. Secondary ion mass spectrometry profiles revealed a pile-up of Mg at the surface, and in-diffusion tails which were deeper than 2. The use of P or Ar co-implantation reduced Mg in-diffusion and increased the activation, but not as much as in the case of Be implantation. Photoluminescence measurements revealed good crystalline quality after annealing. Narrow emissions close to the gap wavelength, and 2 broad bands which were centered at about 1.3 and 0.87eV, were found in the photoluminescence spectra. The bands were the predominant emission in the photoluminescence spectra of layers with higher implanted doses. This band was tentatively attributed to complexes that involved Mg and a defect.

Electrical and Optical Characterization of Mg, Mg/P, and Mg/Ar Implants into InP:Fe. J.M.Martin, S.García, F.Calle, I.Mártil, G.González-Díaz: Journal of Electronic Materials, 1995, 24[1], 59-67