Semi-insulating layers were grown by means of low-pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine and trimethylindium as source materials. By using bis(η5-2,4-dimethylpentadienyl)ruthenium(II) as a precursor, Ru doping concentrations of the order of 4 x 1018/cm3 were achieved, as checked by means of secondary ion mass spectroscopy. The Ru diffusion coefficient was deduced to be less than 10-15cm2/s at 800C. This was 4 orders of magnitude smaller than that of Fe.

Ruthenium as a Superior Compensator of InP A.Dadgar, O.Stenzel, A.Näser, M.Z.Iqbal, D.Bimberg, H.Schumann: Applied Physics Letters, 1998, 73[26], 3878-80